A two-level model for heavily irradiated silicon detectors
- 1 April 1999
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 425 (1-2) , 343-346
- https://doi.org/10.1016/s0168-9002(98)01378-3
Abstract
No abstract availableKeywords
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