Nearly room-temperature type-II quantum-well lasers at 3–4 μm
- 1 May 1997
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (5) , 440-443
- https://doi.org/10.1007/s11664-997-0116-6
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- 175 K continuous wave operation of InAsSb/InAlAsSb quantum-well diode lasers emitting at 3.5 μmApplied Physics Letters, 1996
- Room temperature mid-infrared quantum cascade lasersElectronics Letters, 1996
- Type-II quantum-well lasers for the mid-wavelength infraredApplied Physics Letters, 1995
- Room-temperature 2.78 μm AlGaAsSb/InGaAsSb quantum-well lasersApplied Physics Letters, 1995
- High-power diode-laser-pumped midwave infrared HgCdTe/CdZnTe quantum-well lasersApplied Physics Letters, 1994
- Theoretical performance of InAs/ InxGa1−xSb superlattice-based midwave infrared lasersJournal of Applied Physics, 1994
- Auger lifetime enhancement in InAs–Ga1−xInxSb superlatticesApplied Physics Letters, 1994
- High-power diode-laser-pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μmApplied Physics Letters, 1994
- Single-frequency GaInAsSb/AlGaAsSb quantum-well ridge-waveguide lasers emitting at 2.1 μmApplied Physics Letters, 1993
- Lead salt quantum effect structuresIEEE Journal of Quantum Electronics, 1988