Theoretical performance of InAs/ InxGa1−xSb superlattice-based midwave infrared lasers
- 1 August 1994
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (3) , 1940-1942
- https://doi.org/10.1063/1.357682
Abstract
We show that for appropriate layer widths the performance of ideal InAs/InxGa1−xSb superlattice‐based midwave injection lasers can be limited by radiative rather than Auger recombination. The threshold carrier densities and lifetimes are calculated over the 77–300 K temperature range at 3.5 μm. Lifetimes are obtained from detailed calculations of band‐to‐band Auger and radiative recombination rates based on realistic nonparabolic band structures. This system is therefore a promising new laser candidate.This publication has 6 references indexed in Scilit:
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