Minority carrier lifetimes in ideal InGaSb/InAs superlattices
- 14 December 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (24) , 2905-2907
- https://doi.org/10.1063/1.108480
Abstract
Calculations of band‐to‐band Auger and radiative recombination lifetimes of the recently proposed InxGa1−xSb/InAs superlattices (SL) show them to be promising infrared detectors. Several superlattices with energy gaps in the 5–11 μm range exhibit suppressed p‐type Auger recombination rates due to a large light hole–heavy hole splitting. The p‐type Auger lifetime at 77 K of an 11 μm InxGa1−xSb/InAs SL is found to be, respectively, three and five orders of magnitude longer than those of bulk and superlattice HgCdTe with the same energy gap. The n‐type lifetimes are comparable.Keywords
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