The band-band Auger effect in semiconductors
- 30 November 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (11) , 1107-1115
- https://doi.org/10.1016/0038-1101(87)90074-8
Abstract
No abstract availableKeywords
This publication has 45 references indexed in Scilit:
- Radiative efficiency in low-dimensional semiconductor structuresElectronics Letters, 1985
- Carrier recombination and lifetime in highly doped siliconSolid-State Electronics, 1983
- Theory of intrinsic recombination at zero temperature in small gap semiconductorsPhysica Status Solidi (b), 1983
- Recombination mechanism in heavily doped siliconSolid-State Electronics, 1982
- Band-to-band Auger effect on the output power saturation in InGaAsP LED'sIEEE Journal of Quantum Electronics, 1981
- Carrier density dependence of Auger recombinationSolid-State Electronics, 1978
- The Auger-effect in Hg1−xCdxTeSolid-State Electronics, 1978
- Phonon-assisted Auger recombination in germaniumPhysica Status Solidi (a), 1976
- Radiative decay in compound semiconductorsSolid-State Electronics, 1967
- Gallium arsenide-phosphide: Crystal, diffusion and laser propertiesSolid-State Electronics, 1966