Growth and microstructure of interfacially oriented large-crystalline-grain C60 sheets
- 4 April 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (14) , 1877-1879
- https://doi.org/10.1063/1.111785
Abstract
C60 films reaching sheet thicknesses of ∼10 μm have been grown in vacuum by using a custom‐built effusion cell generating a beam of C60 molecules at flux rates several times higher than rates achieved by conventional methods. High quality films are grown epitaxially on Muscovite 2M1 mica substrates with double domain structures. X‐ray diffraction measurements show that in the [111] direction, the structural coherency of the films reaches ∼5000 Å. Since with increasing thickness the mosaic structures of the films do not disorder significantly, the film grains remain well oriented away from the interface.Keywords
This publication has 12 references indexed in Scilit:
- Determination of charge states ofadsorbed on metal surfacesPhysical Review Letters, 1993
- High resolution electron energy loss spectroscopy of epitaxial films of C60 grown on GaSeJournal of Physics and Chemistry of Solids, 1992
- The adsorption of C60 and the co-adsorption of C60 and H2O on α-Al2O3 (102)-(2 × 1)Chemical Physics Letters, 1992
- Vapor pressure of BuckminsterfullereneApplied Physics Letters, 1992
- Electronic transport properties offilmsPhysical Review Letters, 1992
- Identification of a growth defect in solid C60 by electron diffractionJournal of Materials Research, 1992
- Epitaxial growth of single-crystalon mica by helium-atom scatteringPhysical Review B, 1991
- Superconductivity at 18 K in potassium-doped C60Nature, 1991
- Solid C60: a new form of carbonNature, 1990
- The nucleation, growth, structure and epitaxy of thin surface filmsAdvances in Physics, 1965