Low-temperature LPE growth and characterization of InGaAs ternary alloys
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 73 (3) , 439-444
- https://doi.org/10.1016/0022-0248(85)90006-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Phase diagrams of InGaAsP, InGaAs and InP lattice-matched to (100)InPJournal of Crystal Growth, 1984
- In 0.53 Ga 0.47 As liquid phase epitaxy on (100)-InP substrates at low growth temperaturesElectronics Letters, 1983
- Lpe growth of high purity InP and N- and P-In0.53Ga0.47AsJournal of Electronic Materials, 1983
- High purity InP and InGaAsP grown by liquid phase epitaxyJournal of Crystal Growth, 1982
- Effect of Baking Temperature on Purity of LPE Ga0.47In0.53AsJapanese Journal of Applied Physics, 1981
- Disorder-induced Raman scattering of In1−xGaxP in the transverse acoustic phonon regionSolid State Communications, 1981
- Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON B InPJournal of Electronic Materials, 1980
- An In0.53Ga0.47As junction field-effect transistorIEEE Electron Device Letters, 1980
- The effect of substrate orientation on the liquid-solid distribution coefficients for GaxIn1−xAs in the temperature range 600–700 °CApplied Physics Letters, 1979
- Crystal Dynamics of Gallium ArsenidePhysical Review B, 1963