A multiple pass application of the Boltzmann transport equation for calculating ion implantation profiles at low energies
- 15 May 1983
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 209-210, 33-36
- https://doi.org/10.1016/0167-5087(83)90778-0
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Low energy range distributions of 10B and 11B in amorphous and crystalline siliconNuclear Instruments and Methods in Physics Research, 1982
- Stoichiometric disturbances in ion implanted compound semiconductorsJournal of Applied Physics, 1981
- Recoil range distributions in multilayered targetsNuclear Instruments and Methods, 1981
- An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targetsJournal of Applied Physics, 1980
- Calculations of nuclear stopping, ranges, and straggling in the low-energy regionPhysical Review B, 1977
- Channeling of medium-mass ions through siliconCanadian Journal of Physics, 1968