Excimer laser thermal processing of ultra-shallow junction: laser pulse duration
- 1 April 2004
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 453-454, 145-149
- https://doi.org/10.1016/j.tsf.2003.11.087
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Optical characterization of laser processed ultra-shallow junctionsApplied Surface Science, 2003
- Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experimentsApplied Surface Science, 2003
- Transient enhanced diffusion of boron in SiJournal of Applied Physics, 2002
- Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002
- Ultra-shallow junction formation by excimer laser annealing and low energy (<1 keV) B implantation: A two-dimensional analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002
- Nonmelt Laser Annealing of 1 Kev Boron Implanted SiliconMRS Proceedings, 2001
- Effects of “fast” rapid thermal anneals on sub-keV boron and BF2 ion implantsJournal of Electronic Materials, 1999
- Boron redistribution in a shallow δ-doped Si structure after solid phase epitaxial growthApplied Physics Letters, 1996