Epitaxial growth of α-Fe films on Si(111) substrates
- 19 August 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (8) , 953-955
- https://doi.org/10.1063/1.106312
Abstract
Epitaxial α-Fe films have been grown on HF cleaned Si(111) substrates at 30 °C by electron beam evaporation in an ultrahigh vacuum environment to a thickness of several thousands of Angstroms. Conventional θ−2θ x-ray diffraction shows that only the Fe(222) peak is present, indicating that the films are oriented with the Fe(111) plane parallel to the Si(111) plane. Transmission electron microscopy shows that the Fe[11̄0] direction is parallel to the Si[11̄0] direction in the plane of the substrate.Keywords
This publication has 16 references indexed in Scilit:
- Atomic layer epitaxy—12 years laterVacuum, 1991
- Hybrid Ferromagnetic-Semiconductor StructureScience, 1990
- Epitaxial films of semiconducting FeSi2 on (001) siliconApplied Physics Letters, 1990
- Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel ReportJournal of Materials Research, 1990
- Properties of Fe/Si heterostructure grown by MOCVDApplied Physics A, 1990
- Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxyApplied Physics Letters, 1989
- The influence of steps on the epitaxial growth of iron-silicide on Si(001)Surface Science, 1989
- Overview no. 78 Epitaxy of cubic crystals on (001) cubic substratesActa Metallurgica, 1989
- Atomic layer epitaxyMaterials Science Reports, 1989
- Auger spectra and LEED patterns from vacuum cleaved silicon crystals with calibrated deposits of ironSurface Science, 1971