Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructure
- 8 September 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (10) , 1373-1375
- https://doi.org/10.1063/1.119898
Abstract
We have observed negative differential resistance in InP lattice-matched InGaAs/AlAsSb/InGaAs single-barrier tunneling heterostructure. With a 10-nm-thick barrier, the diode exhibits a peak-to-valley current ratio of 4.2 (1.2) and peak current density of 54 (158) A/cm2 at 100 K (300 K).Keywords
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