Peak-to-valley current ratios as high as 50:1 at room temperature in pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes
- 1 March 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (5) , 2475-2477
- https://doi.org/10.1063/1.351085
Abstract
Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with the highest peak‐to‐valley current ratios reported to date have been fabricated on InP substrates with molecular beam epitaxy. Peak‐to‐valley current ratios as high as 50:1 at 300 K are obtained. The majority of the devices on the sample have a peak‐to‐valley current ratio of 42 at 300 K and 85 at 77 K.This publication has 7 references indexed in Scilit:
- Lattice matched and pseudomorphic In0.53Ga0.47As/InxAl1−x As resonant tunneling diodes with high current peak-to-valley ratio for millimeter-wave power generationJournal of Applied Physics, 1990
- Resonant tunneling in AlSb/InAs/AlSb double-barrier heterostructuresApplied Physics Letters, 1988
- Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperatureApplied Physics Letters, 1988
- A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room TemperatureJapanese Journal of Applied Physics, 1987
- Low temperature MBE growth of high quality AlGaAsJournal of Crystal Growth, 1987
- Physics of resonant tunneling. The one-dimensional double-barrier casePhysical Review B, 1984
- Growth by molecular beam epitaxy and characterization of high purity GaAs and AlGaAsJournal of Applied Physics, 1983