Depth resolution in Auger depth profile analysis of aluminum metallization in microelectronics: The effect of crystalline texture
- 1 July 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 51 (1) , 34-40
- https://doi.org/10.1016/0168-583x(90)90536-4
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Depth resolution improvements using specimen rotation during depth profilingSurface and Interface Analysis, 1989
- On the role of ion bombardment parameters in AES sputter depth profiling of Ta2O5/Ta with Ar+ and Xe+Analytical and Bioanalytical Chemistry, 1989
- Ion beam induced roughness and its effect in AES depth profiling of multilayer Ni/Cr thin filmsSurface and Interface Analysis, 1988
- Sample rotating in Auger electron spectroscopy depth profilingJournal of Vacuum Science & Technology A, 1987
- Improved depth resolution by sample rotation during Auger electron spectroscopy depth profilingThin Solid Films, 1985
- Interactions in metallization systems for integrated circuitsJournal of Vacuum Science & Technology B, 1984
- The depth dependence of the depth resolution in composition–depth profiling with Auger Electron SpectroscopySurface and Interface Analysis, 1983
- Ion-induced Auger-electron emission from aluminumPhysical Review A, 1982
- Quantitative depth profiling in surface analysis: A reviewSurface and Interface Analysis, 1980
- Comparison of Auger spectra of Mg, Al, and Si excited by low−energy electron and low−energy argon−ion bombardmentJournal of Vacuum Science and Technology, 1975