Abstract
We have studied the growth of ultrathin Ag films on Si(111)7×7 between 80–100 K with low-temperature scanning tunneling microscopy. Nucleation of Ag in both halves of the 7×7 is observed. Corner holes and dimer sites are not occupied. Percolation occurs at submonolayer coverage through contact between the nucleated 2D Ag islands. This results in a honeycomb random site percolation problem. Upon completion of the first monolayer, 2D layer-like growth is observed.