STM study of Ge overlayers on Si(001)
- 15 April 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 266 (1-3) , 285-288
- https://doi.org/10.1016/0039-6028(92)91034-9
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- STM study of epitaxial growth of Ge on Si(001)Surface Science, 1991
- Atomic configurations of tip apexes and scanning tunnelling microscopy-spectroscopyMaterials Science and Engineering: B, 1991
- Strain relaxation during the initial stages of growth in Ge/Si(001)Physical Review B, 1991
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Growth of abrupt Ge layers in Si (100)Journal of Crystal Growth, 1989
- Scanning tunneling microscopy of Si(001)Physical Review B, 1986
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Heteroepitaxial growth of Ge films on the Si(100)-2×1 surfaceJournal of Applied Physics, 1985
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983