Measurements of the polarization dependence of the gain of strained multiple quantum well InGaAs-InP lasers
- 1 February 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (2) , 103-105
- https://doi.org/10.1109/68.76854
Abstract
The polarization-dependent gain spectra of both tensile and compressive strain multiple-quantum-well (MQW) In/sub x/Ga/sub 1-x/As-InP lasers in a relatively large strain regime are presented. The results show that MQW lasers with tensile strain and an In concentration as low as 43% in the wells lase in a pure transverse magnetic (TM) mode rather than a transverse electric (TE) mode with a gain difference of 60-70 cm/sup -1/ at all the injection currents investigated. The peak gain for the TE mode is shifted toward shorter wavelengths from that of the TM mode, indicating that the emission is principally due to light hole-electron transition. The differential gain of the TM mode is about 1.5 times higher than that of the TE mode operation. Opposite phenomena were observed in the compressive strained MQW lasers.Keywords
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