Operation principle of the InGaAsP/InP laser transistor
- 1 October 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (7) , 649-651
- https://doi.org/10.1063/1.96045
Abstract
A laser transistor functions both as a semiconductor laser and a heterojunction bipolar transistor. It generates stimulated emission light from the base region. We have obtained, typically, a maximum laser power of 3 mW, a current gain of 2000, and a transition frequency of 2.5 GHz for the fabricated devices. We show that the novel light output control can be obtained by changing its collector voltage. Both laser output and collector current can also be simultaneously controlled by changing the base current.Keywords
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