High contrast ratio self-electro-optic effect devices based on inverted InGaAs/GaAs asymmetric Fabry–Perot modulator
- 27 January 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (4) , 422-424
- https://doi.org/10.1063/1.106622
Abstract
We demonstrate a new class of ‘‘normally off’’ high contrast ratio asymmetric Fabry–Perot (ASFP) reflection modulators based on a blue‐shift of the Fabry–Perot mode under bias. The negative differential resistance (NDR) exhibited by the photocurrent‐bias behavior was exploited to implement self‐electro‐optic devices (SEED) using as the load (a) a photodiode (D‐SEED), and (b) a phototransistor (T‐SEED). In the D‐SEED scheme, a contrast ratio of ∼50:1 with ∼20% throughput was realized. The T‐SEED configuration was found to offer nearly as high contrast ratio but with a ∼200:1 gain from the control light beam. Moreover, the ASFP modulators used belong to the inverted configuration which offers considerable convenience in device integration and optical interconnections.Keywords
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