Some effects of planar defects near the Si/SiO2 interface on electrical properties of silicon-on-sapphire/MOS devices

15 October 1978

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 33 (8) , 773-775
https://doi.org/10.1063/1.90500

Abstract

Data are presented which show some primary effects of widely different planar defect densities (at the top surfaces of the films) on the electrical properties of silicon‐on‐sapphire/MOS devices. These electrical properties are directly related to the microstructure of the films using transmission electron microscope methods. Both surface mobility and effective surface threshold potential are found to depend strongly on the surface defect density. Specimens having surface densities of 3×10⁴ and 4×10⁵ cm⁻¹ were examined.

Keywords

This publication has 3 references indexed in Scilit:

Sapphire Substrate Misorientation and SOS/MOS Transistor Performance
Journal of the Electrochemical Society, 1977
Cross-sectional electron microscopy of silicon on sapphire
Applied Physics Letters, 1975
Cross-sectional specimens for transmission electron microscopy
Journal of Applied Physics, 1974