Metalorganic vapor phase epitaxy growth and nitrogen-doping of ZnxCd1-xS using photo-assistance
- 2 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 570-575
- https://doi.org/10.1016/0022-0248(94)91109-6
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Composition control by photo-irradiation in MOVPE of ZnCdSe and ZnCdS alloy layers and multi-layered structuresJournal of Electronic Materials, 1993
- Low temperature metalorganic vapor phase epitaxial growth of CdxZn1−xS on GaAsJournal of Crystal Growth, 1992
- Effects of Ar ion laser irradiation on MOVPE of ZnSe using DMZn and DMSe as reactantsJournal of Crystal Growth, 1991
- Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as ReactantsJapanese Journal of Applied Physics, 1990
- Organometallic vapor-phase epitaxial growth of cubic ZnCdS lattice-matched to GaAs substrateJournal of Crystal Growth, 1990
- A Magneto-Optical Recording Method of Magnetic Field Modulation with Pulsed Laser IrradiationJapanese Journal of Applied Physics, 1989
- Electrical and optical properties of donor doped ZnS films grown by low-pressure MOCVDJournal of Crystal Growth, 1988
- Investigations of photo-association mechanism for growth rate enhancement in photo-assisted OMVPE of ZnSe and ZnSJournal of Crystal Growth, 1988
- Growth Rate Enhancement by Xenon Lamp Irradiation in Organometallic Vapor-Phase Epitaxy of ZnSeJapanese Journal of Applied Physics, 1987
- Localized excitons and energy transfer in ZnxCd1−xS solid solutionsSolid State Communications, 1985