Ion implanted silicon-electrolyte interface
- 1 November 1977
- journal article
- Published by Springer Nature in Journal of Applied Electrochemistry
- Vol. 7 (6) , 531-537
- https://doi.org/10.1007/bf00616765
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The role of radiation damage on the current-voltage characteristics of p-n junctionsSolid-State Electronics, 1974
- Amorphous silicon-electrolyte interfaceJournal of Non-Crystalline Solids, 1973
- n+ Silicon-electrolyte interface capacitanceSurface Science, 1971
- Energy Levels of Defects in Ion Implanted SiliconPublished by Springer Nature ,1971
- The distribution of damage produced by ion implantation of silicon at room temperatureRadiation Effects, 1970
- Electrical and physical measurements on silicon implanted with channelled and nonchanneled dopant ionsCanadian Journal of Physics, 1968
- Potential distribution and formation of surface states at the silicon-electrolyte interfaceSurface Science, 1966
- Über die Impedanz von Halbleiter-Elektrolyt-Grenzflächen Mitteilung I. Kapazität und Leitwert von Germanium- und Silizium-ElektrodenBerichte der Bunsengesellschaft für physikalische Chemie, 1963
- Disordered Regions in Semiconductors Bombarded by Fast NeutronsJournal of Applied Physics, 1959