Optical properties of
- 15 October 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (11) , 6132-6134
- https://doi.org/10.1103/physrevb.36.6132
Abstract
Interpretations for the energies corresponding to the peaks in the reflectivity and the imaginary part () of the complex dielectric constant (ε=+i) have been sought successfully using Penn-like model calculations. The valence-band–d-band coupling present in Ge may contribute to the effective number of electrons in at the observed peaks at high energies.
Keywords
This publication has 13 references indexed in Scilit:
- A high resolution exafs and near edge study of GeO2 glassJournal of Non-Crystalline Solids, 1986
- Optical properties of amorphous silicon and silicon dioxideJournal of Applied Physics, 1986
- Preparation effects on the UV optical properties of GeO2 glassesJournal of Applied Physics, 1985
- The influence of fusion temperature on the defect center concentration of GeO2 glassJournal of Applied Physics, 1983
- Model based studies of some optical and electronic properties of narrow and wide gap materialsInfrared Physics, 1981
- Improved calculations of the complex dielectric constant of semiconductorsPhysical Review B, 1974
- Optical properties of GeO2 in the ultraviolet regionCzechoslovak Journal of Physics, 1969
- Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric ConstantPhysical Review B, 1969
- Electron Spin Resonance and Optical Absorption in GeO2The Journal of Chemical Physics, 1965
- Wave-Number-Dependent Dielectric Function of SemiconductorsPhysical Review B, 1962