Laser-beam annealing of discharge-produced amorphous silicon
- 1 May 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (5) , 3648-3652
- https://doi.org/10.1063/1.326316
Abstract
Amorphous silicon films prepared by dc glow discharge of silane on room‐temperature substrates darken when exposed to a focused laser beam. The process is primarily thermal, has an activation energy of ∼1 eV, and is accompanied by the desorption of hydrogen. It also affects the etch rate in basic solutions. A bleaching effect, not reported before, is seen at low exposures. All coloration changes are permanent. Possible applications for optical storage of information are discussed.This publication has 15 references indexed in Scilit:
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