Preparation of Pb(Zr, Ti)O3 Films on Pt/Ti/Ta Electrodes by Sol-Gel Process
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9S)
- https://doi.org/10.1143/jjap.32.4144
Abstract
PbZr x Ti1-x O3 (PZT) films were prepared on Pt, Pt/Ti or Pt/Ti/Ta electrodes by the sol-gel process using rapid thermal annealing (RTA). In the case of Pt and Pt/Ti electrodes on poly-Si, thermal treatments of PZT films gave rise to interdiffusion between Pt and Si. This exerted an unfavorable influence on the preparation of PZT films with perovskite structure. The barrier effect of Ta films and the effect of Ti films on the crystallization of PZT films were investigated by X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The electrical properties such as dielectric constants and P-E hysteresis curves were measured for PZT films with various Zr/Ti ratios on Pt/Ti/Ta/SiO2/Si(100) substrates.Keywords
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