Preparation and properties of superconducting BaPb1−xBixO3 thin films by sputtering
- 1 March 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (3) , 1622-1630
- https://doi.org/10.1063/1.330612
Abstract
Superconducting thin films of BaPb1−xBixO3 with transition temperature above 9 K were successfully prepared by rf diode sputtering and subsequent annealing. It was found that sputtered films tended to lack Pb and Bi during deposition, so that targets with excess Pb and Bi were used in order to achieve the film stoichiometry. Sufficient oxygen partial pressure during discharge was found to be requisite for obtaining thin films with low resistivity, high Tc, and sharp superconducting transition. The films admit optical transmission to a small extent in the wavelength range from 500 to 700 nm. Based on these results, some aspects of the band structure are discussed.This publication has 13 references indexed in Scilit:
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