Fabrication of T gate structures by nanoimprint lithography
- 1 November 2001
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 19 (6) , 2797-2800
- https://doi.org/10.1116/1.1417552
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Nanoimprint lithography at the 6 in. wafer scaleJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Fabrication of 30 nm T gates using SiNx as a supporting and definition layerJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Novel alignment system for imprint lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Fabrication of quantum point contacts by imprint lithography and transport studiesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Electron beam lithography process for T- and Γ-shaped gate fabrication using chemically amplified DUV resists and PMMAJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Fabrication of T-shaped gates using UVIII chemicallyamplified DUV resist and PMMAElectronics Letters, 1999
- Sub-10 nm imprint lithography and applicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Nanoscale silicon field effect transistors fabricated using imprint lithographyApplied Physics Letters, 1997
- High aspect ratio asymmetric gate structures employed in novel self-aligned high electron mobility transistor technologyJournal of Vacuum Science & Technology B, 1990
- Mastering technology and electroforming for optical disc systemsTransactions of the IMF, 1987