Fabrication of T-shaped gates using UVIII chemicallyamplified DUV resist and PMMA
- 18 February 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (4) , 338-339
- https://doi.org/10.1049/el:19990196
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- A Simple Fabrication Process of T-Shaped Gates Using a Deep-UV/Electron-Beam/Deep-UV Tri-Layer Resist System and Electron-Beam LithographyJapanese Journal of Applied Physics, 1996
- Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTsElectronics Letters, 1991
- 0.2 Micron length T-shaped gate fabrication using angle evaporationIEEE Electron Device Letters, 1983
- Submicrometre lift-off line with T-shaped cross-sectional formElectronics Letters, 1981