0.2 Micron length T-shaped gate fabrication using angle evaporation
- 1 April 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (4) , 122-124
- https://doi.org/10.1109/edl.1983.25671
Abstract
A new technique has been developed to generate sub-half-micron T-shaped gates in GaAs MESFET's. The technique uses a single-level resist and an angle evaporation process. By using this technique, T-shaped gates with lengths as short as 0.2 µm near the Schottky interface have been fabricated. Measured gate resistance from this structure was 6.1 Ω/mm gate width which is the lowest value ever reported for gates of equal length. GaAs single- and dual-gate MESFET's with 0.3 µm long T-shaped gates have also been fabricated. At 18 GHz, maximum available gain of 9.5 dB in the single-gate FET and maximum stable gain of 19.5 dB in the dual-gate device have been measured.Keywords
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