Theory of the mobility of electrons in a semiconducting-surface inversion layer

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Abstract
The dc mobility for the lowest subband electrons in a Si(100) surface inversion layer have been calculated by the standard memory-function approach and also by the Boltzmann equation. We show that the results obtained from these two methods do not agree with each other when the temperature becomes finite. The scattering mechanisms due to the oxide charges at the semiconductor-insulator interface and the surface roughness are considered. Our numerical results seem to indicate that the dc resistivities derived from both methods can be fitted to agree with experiments at low temperature if the parameters involved are varied slightly.