Temperature dependence of dynamic conductivity of electrons in the surface inversion layer of semiconducting silicon

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Abstract
The cyclotron resonance of conduction electrons in a semiconducting silicon (100) surface inversion layer is studied by using the memory-function approach. The effects due to electron-impurity and electron-electron interactions are included. The cyclotron-resonance mass shift and the transport lifetime are calculated as functions of temperature, electron concentration, and frequency in the absence of a magnetic field. The obtained mass shift as a function of temperature is compared with the measurement of Kennedy et al., and the agreement is only qualitative.