Resonant cavity longwave SiGe-Si photodetector using a buried silicide mirror
- 1 December 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 10 (12) , 1775-1777
- https://doi.org/10.1109/68.730499
Abstract
We describe a resonant cavity detector which uses epitaxial p-type SiGe-Si quantum wells for absorption which are epitaxially grown above a high reflectance tungsten silicide layer. The device operates in the 8-12 /spl mu/m band in normal incidence and exhibits a /spl times/8 enhancement in its peak photoresponse when compared to a nonresonant control device. The black body responsivity is comparable to current n-GaAs-AlGaAs detectors at 1 V making it suitable for integration in a monolithic Si-based focal plane array. Ways to optimize the device design to achieve improved performance are discussed.Keywords
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