Extended long-wavelength λ=11–15-μm GaAs/AlxGa1−xAs quantum-well infrared photodetectors
- 1 November 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (9) , 5101-5107
- https://doi.org/10.1063/1.349019
Abstract
Success has been achieved in extending the spectral wavelength of GaAs/AlxGa1−xAs quantum‐well infrared photodetectors to significantly longer wavelengths, λ=11–15 μm. High responsivity Rp = 0.5 A/W, high quantum efficiency η=12%, and high detectivity D* = 3 × 1010 cm √Hz/W, as well as an excellent noise equivalent temperature difference NEΔT=4 mK have been achieved at T=50 K. High performance NEΔT=19 mK has also been achieved at an even higher temperature of T=60 K.This publication has 31 references indexed in Scilit:
- Experimental and theoretical studies of the performance of quantum-well infrared photodetectorsJournal of Applied Physics, 1991
- Intersubband absorption and infrared photodetection at 3.5 and 4.2 μm in GaAs quantum wellsApplied Physics Letters, 1991
- Quantum efficiency enhancement of AlGaAs/GaAs quantum well infrared detectors using a waveguide with a grating couplerApplied Physics Letters, 1991
- InGaAs/InP long wavelength quantum well infrared photodetectorsApplied Physics Letters, 1991
- Photovoltaic GaAs quantum well infrared detectors at 4.2 μm using indirect AlxGa1−x barriersApplied Physics Letters, 1991
- Large photoconductive gain in quantum well infrared photodetectorsApplied Physics Letters, 1990
- High-detectivity GaAs quantum well infrared detectors with peak responsivity at 8.2 μmJournal of Applied Physics, 1990
- High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectorsApplied Physics Letters, 1990
- Broadband 8–12 μm high-sensitivity GaAs quantum well infrared photodetectorApplied Physics Letters, 1989
- High-detectivity D*=1.0×1010 cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detectorApplied Physics Letters, 1988