Deformation potentials at the valence-band maximum in semiconductors
- 15 August 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (5) , 2638-2644
- https://doi.org/10.1103/physrevb.36.2638
Abstract
The deformation potentials and d’ are calculated for 22 elemental and compound semiconductors. The calculations are based on the self-consistent relativistic linear combination of muffin-tin orbitals band-structure method. It is demonstrated that perturbations caused by strain-induced changes in the nonspherical potential are significant. Chemical trends are discussed in terms of potential parameters relating to a first-principles tight-binding scheme.
Keywords
This publication has 24 references indexed in Scilit:
- Bonding and ionicity in semiconductorsPhysical Review B, 1987
- Electronic structure of GaAs under strainPhysical Review B, 1984
- Deformation Potentials of k = 0 States of Tetrahedral SemiconductorsPhysica Status Solidi (b), 1984
- Deformation potentials and internal strain parameter of siliconSolid State Communications, 1984
- A uniaxial stress apparatus for single-crystal X-ray diffraction on a four-circle diffractometer: application to silicon and diamondJournal of Applied Crystallography, 1982
- Determination of internal strain tensors by energy-dispersive X-ray diffraction: Results for Si using the 006 forbidden reflectionJournal of Applied Crystallography, 1982
- Light Scattering in Solids IIPublished by Springer Nature ,1982
- Theory of optical-phonon deformation potentials in tetrahedral semiconductorsPhysical Review B, 1981
- Internal strain of GaAs. I. Longitudinal caseActa Crystallographica Section A, 1975
- Deformation Potentials in Silicon. I. Uniaxial StrainPhysical Review B, 1962