Electron beam pre-patterning for site-control of self-assembled InAs quantum dots on Inp surfaces
- 1 May 2001
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 30 (5) , 482-486
- https://doi.org/10.1007/s11664-001-0087-y
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electrical and optical properties of self-assembled InAs quantum dots in InP studied by space-charge spectroscopy and photoluminescencePhysical Review B, 2000
- Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxyApplied Physics Letters, 1998
- Selective formation and alignment of InAs quantum dots over mesa stripes along the [011] and [001] directions on GaAs (100) substratesApplied Physics Letters, 1998
- Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substratesApplied Physics Letters, 1998
- Self-organized InAs islands on (100) InP by metalorganic vapor-phase epitaxySurface Science, 1997
- Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic statesApplied Physics Letters, 1997
- Resonant magnetotunneling through individual self-assembled InAs quantum dotsPhysical Review B, 1996
- Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxyApplied Physics Letters, 1996
- Alignment of InP Stranski–Krastanow dots by growth on patterned GaAs/GaInP surfacesApplied Physics Letters, 1996
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974