Intersubband absorption line broadening in semiconductor quantum wells: Nonparabolicity contribution
- 15 February 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (5) , 4511-4514
- https://doi.org/10.1103/physrevb.43.4511
Abstract
The influence of the conduction-band nonparabolicity on the intersubband absorption line broadening in GaAs/ As quantum wells is discussed in the framework of an empirical two-band model. In contrast with earlier papers, the influence of the depolarization effect on the absorption line shape is taken into account. The obtained results indicate that the contribution to the line broadening resulting from the nonparabolicity is, to a large extent, compensated for by the depolarization effect.
Keywords
This publication has 24 references indexed in Scilit:
- Intersubband absorption in GaAs/AlGaAs quantum wells between 4.2K and room temperatureSuperlattices and Microstructures, 1989
- On the linewidths of intersubband transitions on GaAs-AlxGa1−xAs quantum wells in electric fieldSolid State Communications, 1989
- Inter-sub-band absorption in GaAs/AlGaAs quantum wells between 4.2 K and room temperatureSemiconductor Science and Technology, 1988
- The effect of conduction band non-parabolicity on inter-sub-band absorption in doped quantum wellsSemiconductor Science and Technology, 1988
- Effective-mass-mismatch-induced intersubband absorption line broadening in semiconductor quantum wellsPhysical Review B, 1988
- Enhancement of nonparabolicity effects in a quantum wellPhysical Review B, 1987
- Newk⋅ptheory for GaAs/As-type quantum wellsPhysical Review B, 1987
- Band nonparabolicity effects in semiconductor quantum wellsPhysical Review B, 1987
- k⋅ptheory of semiconductor superlattice electronic structure. I. Formal resultsPhysical Review B, 1986
- Theoretical investigations of superlattice band structure in the envelope-function approximationPhysical Review B, 1982