Low threshold lasing operation of narrow stripeoxide-confinedGaInNAs/GaAs multiquantum well lasers at 1.28 µm
- 13 April 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (8) , 725-726
- https://doi.org/10.1049/el:20000586
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- 1.29 µm GaInNAs multiple quantum-well ridge-waveguidelaser diodes with improved performanceElectronics Letters, 1999
- High power CW operation of InGaAsN lasers at 1.3µmElectronics Letters, 1999
- Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µmElectronics Letters, 1999
- 1.3 µm GaInAsP SL-QW Al-oxide confined inner stripe lasers on p -InP substratewith AlInAs-oxide confinement layerElectronics Letters, 1998