The annealing characteristics of phosphorus-implanted silicon Part II

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Abstract
Silicon samples implanted with 3·13 × 1014 phosphorus ions/cm2 at 50 and 100 KeV were isochronally annealed over the temperature range 600 to 1200 K. Sheet resistivity and sheet Hall measurements were taken, and related to first- and second-order thermal reactions governing the increase in conductivity. At selected temperatures specimens were sectioned by anodic stripping and the impurity profiles obtained. Changes in these are correlated with the activation of the implanted ions in volumes of the crystal characterized by large or small amounts of crystal damage. Four separate thermal activation reactions are identified. These are discussed in terms of vacancy mechanisms and it is shown that the annealing characteristics of all phosphorus-implanted silicon can be explained by using appropriate combinations of these first- and second-order thermal reactions. The effect of thermal diffusion on the shape of the impurity profile is considered, and is shown to be negligible below anneal temperatures of 1100K.