Electron cyclotron resonance etching characteristics of GaN in plasmas with and without hydrogen

This publication has 11 references indexed in Scilit:

• Study of chemically assisted ion beam etching of GaN using HCl gas
  Applied Physics Letters, 1995
• High etch rates of GaN with magnetron reactive ion etching in BCl3 plasmas
  Applied Physics Letters, 1995
• Hydrogen incorporation in GaN, AlN, and InN duringCl ₂ /CH ₄ /H ₂ /Ar ECR plasma etching
  Electronics Letters, 1995
• High temperature electron cyclotron resonance etching of GaN, InN, and AlN
  Applied Physics Letters, 1995
• Characteristics of chemically assisted ion beam etching of gallium nitride
  Applied Physics Letters, 1994
• Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)
  Applied Physics Letters, 1993
• Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation
  Japanese Journal of Applied Physics, 1992
• High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
  Applied Physics Letters, 1992
• In Situ Monitoring of GaN Growth Using Interference Effects
  Japanese Journal of Applied Physics, 1991
• High-speed modulation of InGaAs-GaAs strained-layer multiple-quantum-well lasers fabricated by chemically assisted ion-beam etching
  IEEE Photonics Technology Letters, 1991