Hydrogen incorporation in GaN, AlN, and InN duringCl 2 /CH 4 /H 2 /Ar ECR plasma etching
- 11 May 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (10) , 836-837
- https://doi.org/10.1049/el:19950558
Abstract
Hydrogen concentrations up to ~1020 cm-3 in GaN and AlN and ~1019 cm-3 in InN are found to be incorporated during ECR plasma etching in Cl2/CH4/H2Ar at 170°C. Even very short duration (40 s) etch treatments produce hydrogen incorporation depths ≥0.2 µm ahead of the etch front, and may lead to electrical passivation effects within this region. Post-etch annealing at 450 – 500°C restores the initial conductivity.Keywords
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