Growth of carbon-doped base GaAs/AlGaAs HBT by gas-source MBE using TEG, TEA, TMG, AsH3, and Si2H6
- 2 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 228-233
- https://doi.org/10.1016/0022-0248(92)90395-y
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Selfaligned AlGaAs/GaAs HBT grown by MOMBEElectronics Letters, 1991
- Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous SourcesJapanese Journal of Applied Physics, 1991
- A Study of Cold Dopant Sources for Gas Source MBE: The use of Disilane as an N-Type Dopant of AlxGa1-xAs (x=0–0.28) and Trimethylgallium as a P-Type Dopant of GaAsJapanese Journal of Applied Physics, 1990
- Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alaneApplied Physics Letters, 1990
- GaAs-AlGaAs HBT with carbon doped base layer grown by MOMBEElectronics Letters, 1990
- Metalorganic gas control system for gas source molecular beam epitaxyJournal of Vacuum Science & Technology A, 1990
- Characterization of p-type GaAs heavily doped with carbon grown by metalorganic molecular-beam epitaxyJournal of Applied Physics, 1988