Strain-induced enhancement of resonant current of holes in multilayered heterostructures

We study the effects of axial strains and the admixture of resonant hole states on transmissivities and on partial and total currents of holes in multilayered structures. As an example, we have used strained ${\mathrm{Ga}}_x$In${}_{1-x}$As-InP double barriers under external fields and show different aspects of the surfaces of energy and the nature of the solutions for different forms of internal strain built in the interfaces. We discuss possible optimal strain conditions on coherent tunneling probabilities and total currents that may enhance transport properties of each type of carrier.