Low-threshold and wide-bandwidth 1.3 μm InGaAsP buried crescent injection lasers with semi-insulating current confinement layers

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Abstract
A hybrid growth technique has been used to fabricate low-threshold, high-modulation bandwidth, and high-power 1.3 μm InGaAsP buried crescent injection lasers. The technique involves a first growth of an Fe-doped semi-insulating current confinement layer by low-pressure metalorganic chemical vapor deposition followed by a liquid phase epitaxy regrowth. The lasers have cw threshold currents as low as 10 mA at 25 °C, total differential quantum efficiency over 50%, high-temperature operation up to 100 °C, and output power more than 33 mW/facet. A 3-dB modulation bandwidth of 8.4 GHz has been achieved at 5 mW/facet.