Semi-insulator-embedded InGaAsP/InP flat-surface buried heterostructure laser
- 1 December 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (11) , 1127-1129
- https://doi.org/10.1063/1.96350
Abstract
A new structure semi-insulator-embedded flat-surface buried heterostructure 1.3 μm InGaAsP/InP laser has been developed using chloride vapor phase epitaxy. cw threshold currents as low as 18 mA and high-temperature cw operation up to 100 °C have been obtained. Small-signal response above 4 GHz has been achieved and no remarkable roll-off has been observed, which is due to small parasitic capacitance.Keywords
This publication has 9 references indexed in Scilit:
- Low-threshold high-speed 1.55 μm vapour phase transported buried heterostructure lasers (VPTBH)Electronics Letters, 1984
- InGaAsP/InP buried crescent laser diode emitting at 1.3 µm wavelengthIEEE Journal of Quantum Electronics, 1984
- TDEG in In 0.53 Ga 0.47 As-InP heterojunction grown by chloride VPEElectronics Letters, 1983
- InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinementJournal of Lightwave Technology, 1983
- V-grooved substrate buried heterostructure InGaAsP/InP laser emitting at 1.3 µm wavelengthIEEE Journal of Quantum Electronics, 1982
- 1.5 μm GaInAsP/InP buried heterostructure lasers fabricated by hybrid combination of liquid- and vapour-phase epitaxyElectronics Letters, 1982
- Groove GaInAsP laser on semi-insulating InPElectronics Letters, 1981
- Long Wavelength InGaAsP/InP Lasers for Optical Fiber Communication SystemsJournal of Optical Communications, 1980
- Embedded-stripe GaAs-GaAlAs double-heterostructure lasers with polycrystalline GaAsP layers - I: Lasers with cleaved mirrorsIEEE Journal of Quantum Electronics, 1977