Deep-level luminescence in AlxGa1−xAs double-heterostructure lasers
- 15 April 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (8) , 520-522
- https://doi.org/10.1063/1.90849
Abstract
It is shown that the deep level (∼1.0 eV) luminescence observed in double‐heterostructure lasers originates from the E3 radiation damage trap (Ga vacancy) or a closely related vacancy‐donor complex in the n‐type GaAs substrate region rather than in the active region as had been reported previously.Keywords
This publication has 7 references indexed in Scilit:
- On the relationship of light-output nonlinearities and light-output spikes in proton-bombarded stripe-geometry double-heterostructure (Al,Ga)As lasersJournal of Applied Physics, 1979
- Semiconductor-laser self pulsing due to deep level trapsElectronics Letters, 1978
- Deep center luminescence (1.02 eV) in GaAs/(GaAl)As epitaxial layers and double-heterostructure lasersApplied Physics Letters, 1978
- Identification of the defect state associated with a gallium vacancy in GaAs andPhysical Review B, 1977
- Capacitance spectroscopy studies of degraded AlxGa1−xAs DH stripe-geometry lasersJournal of Applied Physics, 1976
- Enhanced localized degradation and anomalous emission spectra of Ga1−xAlxAs double heterostructure lasers induced by fabrication processesApplied Physics Letters, 1976
- Recombination-enhanced annealing of the E1 and E2 defect levels in 1-MeV-electron–irradiated n-GaAsJournal of Applied Physics, 1976