Enhanced localized degradation and anomalous emission spectra of Ga1−xAlxAs double heterostructure lasers induced by fabrication processes
- 15 September 1976
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (6) , 353-355
- https://doi.org/10.1063/1.89076
Abstract
Oxide-insulated stripe geometry double heterostructure lasers have been fabricated with and without a deep (1.3 μm) zinc diffusion prior to alloyed contacting. The two processes were found to result first in emission spectra indicative of significant differences in the point defect complex densities in the device active regions, and second in distinctly different modes of dark effect degradation.Keywords
This publication has 9 references indexed in Scilit:
- Photoluminescence studies of vacancies and vacancy-impurity complexes in annealed GaAsJournal of Luminescence, 1975
- Heterojunction diodes of (AlGa)As−GaAs with improved degradation resistanceApplied Physics Letters, 1975
- Defect structure of degraded heterojunction GaAlAs−GaAs lasersApplied Physics Letters, 1975
- Influence of device fabrication parameters on gradual degradation of (AlGa)As cw laser diodesApplied Physics Letters, 1974
- Liquid phase epitaxial growth of six-layer GaAs/(GaAl)As structures for injection lasers with 0.04 μm thick centre layerJournal of Crystal Growth, 1974
- Degradation of AlxGa1−xAs heterojunction electroluminescent devicesApplied Physics Letters, 1974
- Effect of doping on degradation of GaAs–Alx Ga1−xAs injection lasersApplied Physics Letters, 1974
- Defect structure introduced during operation of heterojunction GaAs lasersApplied Physics Letters, 1973
- Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor CenterPhysical Review B, 1968