Dopant-induced excimer laser ablation of Poly(tetrafluoroethylene)
- 1 March 1992
- journal article
- Published by Springer Nature in Applied Physics B Laser and Optics
- Vol. 54 (3) , 227-230
- https://doi.org/10.1007/bf00325507
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Applications of doping and dedoping of Teflon AF films in microfabrication using KrF and ArF excimer lasersApplied Surface Science, 1990
- Theory for the etching of organic materials by ultraviolet laser pulsesApplied Physics Letters, 1989
- Theory of polymer ablationApplied Physics Letters, 1988
- Ultraviolet laser ablation and etching of polymethyl methacrylate sensitized with an organic dopantApplied Physics A, 1988
- Laser-photoetching characteristics of polymers with dopantsApplied Physics A, 1988
- Dopant-induced ablation of polymers by a 308 nm excimer laserJournal of Vacuum Science & Technology B, 1988
- Analysis of the Dynamics of theInteraction of Ultraviolet LasersWith Organic PolymersLaser Chemistry, 1988
- Femtosecond uv excimer laser ablationApplied Physics B Laser and Optics, 1987
- Self-developing photoetching of poly(ethylene terephthalate) films by far-ultraviolet excimer laser radiationApplied Physics Letters, 1982
- Effective deep ultraviolet photoetching of polymethyl methacrylate by an excimer laserApplied Physics Letters, 1982