Assessment of interface composition in superlattices by far-infrared reflectivity
- 15 January 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 49 (4) , 2604-2607
- https://doi.org/10.1103/physrevb.49.2604
Abstract
We consider cation interdiffusion in the calculation of far-infrared reflectivity (FIR) spectra of GaAs/AlAs superlattices grown onto n-doped GaAs substrates. Optimum substrate doping levels exist at which the sensitivity of FIR to intermixing is greatly enhanced, thereby allowing the determination of interface composition and thickness.Keywords
This publication has 21 references indexed in Scilit:
- Effects of compositional disorder on phonons in layered semiconductor microstructuresPhysical Review B, 1993
- Long range gallium segregation in the AlAs layers of GaAs/AlAs superlatticesApplied Physics Letters, 1992
- Effects of disorder on the Raman spectra of GaAs/AlAs superlatticesPhysical Review B, 1992
- Cation interdiffusion in GaAs-AlAs superlattices measured with Raman spectroscopyApplied Physics Letters, 1991
- Effect of interface disorder on the confined phonon modes of GaAs/AlAs superlatticesPhysical Review B, 1991
- Excitons, phonons, and interfaces in GaAs/AlAs quantum-well structuresPhysical Review Letters, 1991
- Lattice dynamics of superlattices with interface roughnessPhysical Review B, 1990
- Atomic-scale roughness of GaAs/AlAs interfaces: A Raman scattering study of asymmetrical short-period superlatticesApplied Physics Letters, 1990
- Interface roughness and the dispersion of confined LO phonons in GaAs/AlAs quantum wellsPhysical Review B, 1988
- Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxyApplied Physics Letters, 1985