Cation interdiffusion in GaAs-AlAs superlattices measured with Raman spectroscopy
- 25 November 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (22) , 2859-2861
- https://doi.org/10.1063/1.105833
Abstract
A combined Raman and ab initio lattice dynamical study of ultrathin (GaAs)4(AlAs)4 superlattices, focusing mainly on AlAs-like vibrations, clearly shows that a significant amount of interdiffusion occurs in these samples when grown at conventional molecular-beam epitaxy temperatures between 580 and 640-degrees-C. At these temperatures, growth interruption is found to have little impact on the structural quality of the superlatticesKeywords
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