Comment on ‘‘Chemical mapping of semiconductor interfaces at near-atomic resolution’’
- 29 October 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (18) , 2317
- https://doi.org/10.1103/physrevlett.65.2317
Abstract
A Comment on the Letter by A. Ourmazd et al., Phys. Rev. Lett. 62, 933 (1989).Keywords
This publication has 10 references indexed in Scilit:
- Chemical Mapping of Semiconductor Interfaces at Near-Atomic ResolutionPhysical Review Letters, 1989
- Band gap modulation in two dimensions by MBE growth of tilted superlattices and applications to quantum confinement structuresJournal of Crystal Growth, 1989
- Terrace width ordering mechanism during epitaxial growth on a slightly tilted substrateJournal of Crystal Growth, 1989
- Structural features of MBE grown very short period GaAs-AlAs superlatticesJournal of Crystal Growth, 1988
- Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruptionJournal of Crystal Growth, 1987
- Photoluminescence study of interface defects in high-quality GaAs-GaAlAs superlatticesJournal of Applied Physics, 1986
- Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy at high substrate temperatureApplied Physics Letters, 1985
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlatticeApplied Physics Letters, 1984
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981