IrO2/Pb(ZrxTi1-x)O3(PZT)/Pt Ferroelectric Thin-Film Capacitors Resistant to Hydrogen-Annealing Damage
- 1 August 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (8A) , L1032-1034
- https://doi.org/10.1143/jjap.36.l1032
Abstract
The PZT polarization hysteresis characteristics in a Pt/PZT/Pt ferroelectric capacitor are degraded by annealing in a hydrogen-containing atmosphere due to the catalytic effect of the top Pt electrode. This can be avoided by using an IrO2/PZT/Pt capacitor structure as we proposed. During hydrogen annealing of the as-grown capacitor, the top IrO2 electrode is deoxidized, degrading the capacitor characteristics. However, the polarization hysteresis characteristics are preserved after hydrogen annealing at 300° C if the IrO2/PZT/Pt capacitor is pre-annealed in oxygen at 600° C.Keywords
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